Grain flash temperatures in diamond wire sawing of silicon

Abstract

AbstractDiamond wire sawing has obtained 90% of the single-crystal silicon–based photovoltaic market, mainly for its high production efficiency, high wafer quality, and low tool wear. The diamond wire wear is strongly influenced by the temperatures in the grain-workpiece contact zone; and yet, research studies on experimental investigations and modeling are currently lacking. In this direction, a temperature model is developed for the evaluation of the flash temperatures at the grain tip with respect to the grain penetration depth. An experimental single-grain scratch test setup is designed to validate the model that can emulate the long contact lengths as in the wire sawing process, at high speeds. Furthermore, the influence of brittle and ductile material removal modes on cutting zone temperatures is evaluated.