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Introduction

Published:2004 Issue: Volume: Page:1-6
ISSN:0933-033X
Container-title:Chemical-Mechanical Planarization of Semiconductor Materials
language:
Short-container-title:

Author:

Oliver Michael R.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-662-06234-0_1

Reference2 articles.

1. L.M. Cook, J. Non-Crystalline Solids, vol. 120, 152, 1990.

2. A.S. Lawing, Proceedings 2002 CMP-MIC Conference, 310, IMIC, Tampa, 2002.

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1. Study on Abnormally Accelerated Oxidation of Tungsten Plugs during Tungsten Chemical Mechanical Polishing in Semiconductor Manufacturing;ECS Journal of Solid State Science and Technology;2021-06-01

2. Automated Linescan Analysis for CMP Modeling;Mathematical Problems of Computer Science;2020-12-25

3. Chemical Mechanical Planarization of Ruthenium with Oxone as Oxidizer;Electrochemical and Solid-State Letters;2012

4. Influence of pH, immersion time, and benzotriazole concentration on copper corrosion in citric acid based slurries;Chinese Science Bulletin;2011-04

5. 1H-Benzotriazole Incorporated Pad for Chemical Mechanical Planarization of Copper;Journal of The Electrochemical Society;2010

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