Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-021-3372-2.pdf
Reference6 articles.
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2. Zhang E X, Samsel I K, Hooten N C, et al. Heavy-ion and laser induced charge collection in SiGe channel pMOSFETs. IEEE Trans Nucl Sci, 2014, 61: 3187–3192
3. Samsel I K, Zhang E X, Sternberg A L, et al. Charge collection mechanisms of Ge-channel bulk pMOSFETs. IEEE Trans Nucl Sci, 2015, 62: 2725–2731
4. Mahatme N N, Gaspard N J, Jagannathan S, et al. Impact of supply voltage and frequency on the soft error rate of logic circuits. IEEE Trans Nucl Sci, 2013, 60: 4200–4206
5. Yun Q X, Lin M, An X, et al. Investigation of different interface passivation on Germanium: RTO-GeO2 and nitrogen-plasma-passivation. In: Proceedings of the 11th International Conference on Solid-State and Integrated Circuit Technology, Xi’an, 2012. 1–3
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