Recent progress of integrated circuits and optoelectronic chips-Reference-Cited by-同舟云学术

Recent progress of integrated circuits and optoelectronic chips

Published:2021-05-27 Issue:10 Volume:64 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Hao Yue,Xiang Shuiying,Han Genquan,Zhang Jincheng,Ma Xiaohua,Zhu Zhangming,Guo Xingxing,Zhang Yahui,Han Yanan,Song Ziwei,Liu Yan,Yang Ling,Zhou Hong,Shi Jiangyi,Zhang Wei,Xu Min,Zhao Weisheng,Pan Biao,Huang Yangqi,Liu Qi,Cai Yimao,Zhu Jian,Ou Xin,You Tiangui,Wu Huaqiang,Gao Bin,Zhang Zhiyong,Guo Guoping,Chen Yonghua,Liu Yong,Chen Xiangfei,Xue Chunlai,Wang Xingjun,Zhao Lixia,Zou Xihua,Yan Lianshan,Li Ming

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-021-3235-7.pdf

Reference232 articles.

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2. Hao Y, Zhang J F, Shen B, et al. Progress in group III nitride semiconductor electronic devices. J Semicond, 2012, 33: 081001

3. Tsao J Y, Chowdhury S, Hollis M A, et al. Ultrawide-bandgap semiconductors: research opportunities and challenges. Adv Electron Mater, 2018, 4: 1600501

4. Zhou H, Zhang J C, Zhang C F, et al. A review of the most recent progresses of state-of-art gallium oxide power devices. J Semicond, 2019, 40: 011803

5. Zhang H P, Yuan L, Tang X Y, et al. Progress of ultra-wide bandgap Ga2O3 semiconductor materials in power MOSFETs. IEEE Trans Power Electron, 2020, 35: 5157–5179

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