High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation-Reference-Cited by-同舟云学术

High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

Published:2023-10-07 Issue:12 Volume:66 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Fan Yutong,Liu Xi,Huang Ren,Wen Yu,Zhang Weihang,Zhang Jincheng,Liu Zhihong,Zhao Shenglei

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-022-3707-2.pdf

Reference5 articles.

1. Chowdhury N, Xie Q, Yuan M, et al. First demonstration of a self-aligned GaN p-FET. In: Proceedings of 2019 IEEE International Electron Devices Meeting Visions, San Francisco, 2019. 1–4

2. Shibata D, Kajitani R, Ogawa M, et al. 1.7 kV/1.0 mΩ · cm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure. In: Proceedings of 2016 IEEE International Electron Devices Meeting Visions, San Francisco, 2016. 1–4

3. Lee H S, Piedra D, Sun M, et al. 3000-V 4.3-mΩ · cm2 InAlN/GaN MOSHEMTs with AlGaN back barrier. IEEE Electron Device Lett, 2012, 33: 982–984

4. Tang C, Xie G, Sheng K. Study of the leakage current suppression for hybrid-Schottky/Ohmic drain AlGaN/GaN HEMT. Microelectron Reliability, 2015, 55: 347–351

5. Zhang W, Fu L, Liu X, et al. In-situ-SiN/AlN/Al0.05Ga0.95N high electron-mobility transistors on Si-substrate using Al2O3/SiO2 passivation. IEEE J Electron Devices Soc, 2021, 9: 348–352

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diamond/cubic boron nitride (111) heterojunction interface: Rational regulation of high two-dimonsional electron gas;Surfaces and Interfaces;2024-08

2. Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability;Science China Information Sciences;2024-01-25