Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability
Author:
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11432-023-3795-8.pdf
Reference7 articles.
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5. Zhang W H, Fu L Y, Liu X, et al. In-situ-SiN/AlN/Al0.05Ga0.95N high electron-mobility transistors on Si-substrate using Al2O3/SiO2 passivation. IEEE J Electron Dev Soc, 2021, 9: 348–352
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1. Van der Waals epitaxial AlGaN/GaN growth on hexagonal BN via two-dimensional N-induced dislocation slip;Scripta Materialia;2024-07
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