Two-dimensional materials-based integrated hardware-Reference-Cited by-同舟云学术

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Two-dimensional materials-based integrated hardware

Published:2023-05-10 Issue:6 Volume:66 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Peng Zhuiri,Lin Runfeng,Li Zheng,Xu Langlang,Yu Xiangxiang,Huang Xinyu,Shi Wenhao,He Xiao,Meng Xiaohan,Tong Lei,Miao Xiangshui,Ye Lei

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-023-3744-2.pdf

Reference157 articles.

1. Salahuddin S, Ni K, Datta S. The era of hyper-scaling in electronics. Nat Electron, 2018, 1: 442–450

2. Frank D J, Dennard R H, Nowak E, et al. Device scaling limits of Si MOSFETs and their application dependencies. Proc IEEE, 2001, 89: 259–288

3. Theis T N, Solomon P M. In quest of the “next switch”: prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor. Proc IEEE, 2010, 98: 2005–2014

4. Das S, Sebastian A, Pop E, et al. Transistors based on two-dimensional materials for future integrated circuits. Nat Electron, 2021, 4: 786–799

5. Liu Y, Duan X, Shin H J, et al. Promises and prospects of two-dimensional transistors. Nature, 2021, 591: 43–53

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