Structure descriptor for surface passivation in the simulation of atomistic models
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-014-0876-4.pdf
Reference26 articles.
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2. Khondker A N, Kim D M, Ahmed S S, et al. Theory of conduction in polysilicon: drift-diffusion approach in crystalline- amorphous-crystalline semiconductor systemPart II: general I-V theory. IEEE Trans Electron Dev, 1984, 31: 493–500
3. Green M A. Intrinsic concentration, effective densities of states, and effective mass in silicon. J Appl Phys, 1990, 67: 2944–2954
4. Vasileska D, Mamaluy D, Khan H R, et al. Semiconductor device modeling. J Comput Theor Nanosci, 2008, 5: 999–1030
5. Martinez A, Kalna K, Sushko P V, et al. Impact of body-thickness-dependent band structure on scaling of double-gate MOSFETs: a DFT/NEGF study. IEEE Trans Nanotechnol, 2009, 8: 159–166
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