Strain coefficient measurement for the (100) uniaxial strain silicon by Raman spectroscopy
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-011-4180-4.pdf
Reference19 articles.
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3. Ren C, Yu H Y, Kang J F, et al. Fermi-level pinning induced thermal instability in the effective work function of TaN in TaN/SiO2 gate stack. IEEE Electron Device Lett, 2004, 25: 123–125
4. Yeo Y C, Qiang L, Pushkar R, et al. Dual-metal gate CMOS technology with ultra-thin silicon nitride gate dielectric. IEEE Electron Device Lett, 2001, 22: 227–229
5. Misra V, Lucovsky G, Parsons G. Issues in high-k gate stack interfaces. MRS Bull, 2001, 27: 212–216
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