A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory-Reference-Cited by-同舟云学术

A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

Published:2023-04-04 Issue:5 Volume:66 Page:
ISSN:1674-733X
Container-title:Science China Information Sciences
language:en
Short-container-title:Sci. China Inf. Sci.

Author:

Zhao Yulin,Wang Yuan,Zhang Donglin,Han Zhongze,Hu Qiao,Liu Xuanzhi,Ding Qingting,Cheng Jinhui,Zhang Wenjun,Cao Yue,Zhou Ruixi,Luo Qing,Yang Jianguo,Lv Hangbing

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Link

https://link.springer.com/content/pdf/10.1007/s11432-021-3490-3.pdf

Reference7 articles.

1. Chen W-H, Li K-X, Lin W-Y, et al. A 65nm 1Mb non-volatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors. In: Proceedings of IEEE International Solid-State Circuits Conference-(ISSCC), 2018

2. Wu J Y, Chen Y S, Khwa W S, et al. A 40nm low-power logic compatible phase change memory technology. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2018

3. Slesazeck S, Havel V, Breyer E, et al. Uniting the trinity of ferroelectric HfO2 memory devices in a single memory cell. In: Proceedings of IEEE 11th International Memory Workshop (IMW), 2019

4. Hassan H, Patel M, Kim J S, et al. CROW: a low-cost substrate for improving DRAM performance, energy efficiency, and reliability. In: Proceedings of ACM/IEEE 46th Annual International Symposium on Computer Architecture (ISCA), 2019

5. Slesazeck S, Ravsher T, Havel V, et al. A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic application. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), 2019

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications;Micromachines;2023-08-09