Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications
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Published:2023-08-09
Issue:8
Volume:14
Page:1572
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Peng Bo1, Zhang Donglin2, Wang Zhongqiang1, Yang Jianguo34ORCID
Affiliation:
1. Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China 2. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China 3. Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 4. Research Center for Intelligent Computing Hardware, Zhejiang Lab, Hangzhou 311121, China
Abstract
Hf0.5Zr0.5O2-based multi-level cell (MLC) ferroelectric random-access memory (FeRAM) has great potential for high-density storage applications. However, it is usually limited by the issues of a small operation margin and a large input offset. The study of circuit design and optimization for MLC FeRAM is necessary to solve these problems. In this work, we propose and simulate a configuration for a Hf0.5Zr0.5O2-based 3TnC MLC FeRAM macro circuit, which also presents a high area efficiency of 12F2 for each bit. Eight polarization states can be distinguished in a single fabricated Hf0.5Zr0.5O2-based memory device for potential MLC application, which is also simulated by a SPICE model for the subsequent circuit design. Therein, a nondestructive readout approach is adopted to expand the reading margin to 450 mV between adjacent storage levels, while a capacitorless offset-canceled sense amplifier (SA) is designed to reduce the offset voltage to 20 mV, which improves the readout reliability of multi-level states. Finally, a 4 Mb MLC FeRAM macro is simulated and verified using a GSMC 130 nm CMOS process. This study provides the foundation of circuit design for the practical fabrication of a Hf0.5Zr0.5O2-based MLC FeRAM chip in the future, which also suggests its potential for high-density storage applications.
Funder
National Natural Science Foundation of China Major Scientific Research Project of Zhejiang Lab Strategic Priority Research Program of the Chinese Academy of Sciences
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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