A comb-gate silicon tunneling field effect transistor with improved on-state current
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
http://link.springer.com/content/pdf/10.1007/s11432-012-4713-5.pdf
Reference11 articles.
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2. Verhulst A S, Vandenberghe W G, Maex K, et al. Tunnel field-effect transistor without gate-drain overlap. Appl Phys Lett, 2007, 91: 053102–053104
3. Toh E H, Wang G H, Samudra G, et al. Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. J Appl Phys, 2008, 103: 104504
4. Verhulst A S, Vandenberghe W G, Maex K, et al. Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization. J Appl Phys, 2008, 104: 064514
5. Verhulst A S, Vandenberghe W G, Maex K, et al. Complementary silicon-based heterostructure tunnel-fets with high tunnel rates. IEEE Electr Device L, 2008, 29: 1398–1401
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