Fully coupled electrothermal simulation of resistive random access memory (RRAM) array
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Computer Science
Link
https://link.springer.com/content/pdf/10.1007/s11432-019-2667-5.pdf
Reference8 articles.
1. Lu N D, Li L, Sun P X, et al. Carrier-transport-path-induced switching parameter fluctuation in oxide-based resistive switching memory. Mater Res Express, 2015, 2: 046304
2. Hudec B, Hsu C W, Wang I T, et al. 3D resistive RAM cell design for high-density storage class memory-a review. Sci China Inf Sci, 2016, 59: 061403
3. Larentis S, Nardi F, Balatti S, et al. Resistive switching by voltage-driven ion migration in bipolar RRAM-Part II: modeling. IEEE Trans Electron Devices, 2012, 59: 2468–2475
4. Wang W J, Xu R, Li H Y, et al. Massively parallel simulation of large-scale electromagnetic problems using one high-performance computing scheme and domain decomposition method. IEEE Trans Electromagn Compat, 2017, 59: 1523–1531
5. Li S C, Chen W C, Luo Y D, et al. Fully coupled multiphysics simulation of crosstalk effect in bipolar resistive random access memory. IEEE Trans Electron Dev, 2017, 64: 3647–3653
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