Bistability and nonequilibrium phase transitions in a semiconductor recombination model with impact ionization of donors-Reference-Cited by-同舟云学术

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Bistability and nonequilibrium phase transitions in a semiconductor recombination model with impact ionization of donors

Published:1982-03 Issue:1 Volume:46 Page:23-30
ISSN:0340-224X
Container-title:Zeitschrift für Physik B Condensed Matter
language:en
Short-container-title:Z. Physik B - Condensed Matter

Author:

Schöll E.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF01640349.pdf

Reference44 articles.

1. Volkov, A.F., Kogan, Sh.M.: Sov. Phys. Usp.11, 881 (1969)

2. Thomas, H.: In: Synergetics. Haken, H. (ed.) Stuttgart: Teubner 1973

3. Bonch-Bruevich, V.L., Zvyagin, I.P., Mironov, A.G.: Domain Electrical Instabilities in Semiconductors. Consultant Bureau (New York) 1975

4. Shaw, M.P., Grubin, H.L., Solomon, P.: The Gunn-Hilsum Effect. New York: Academic Press 1979

5. Pogrebnyak, V.A.: Sov. Phys. Semicond.14, 1210 (1980)

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