Thermal conductivity of boron carbide under fast neutron irradiation

Author:

Qu Zhixue,Yu Chuanjin,Wei Yitong,Su Xiping,Du Aibing

Abstract

AbstractDue to the complex products and irradiation-induced defects, it is hard to understand and even predict the thermal conductivity variation of materials under fast neutron irradiation, such as the abrupt degradation of thermal conductivity of boron carbide (B4C) at the very beginning of the irradiation process. In this work, the contributions of various irradiation-induced defects in B4C primarily consisting of the substitutional defects, Frenkel defect pairs, and helium bubbles were re-evaluated separately and quantitatively in terms of the phonon scattering theory. A theoretical model with an overall consideration of the contributions of all these irradiation-induced defects was proposed without any adjustable parameters, and validated to predict the thermal conductivity variation under irradiation based on the experimental data of the unirradiated, irradiated, and annealed B4C samples. The predicted thermal conductivities by this model show a good agreement with the experimental data after irradiation. The calculation results and theoretical analysis in light of the experimental data demonstrate that the substitutional defects of boron atoms by lithium atoms, and the Frenkel defect pairs due to the collisions with the fast neutrons, rather than the helium bubbles with strain fields surrounding them, play determining roles in the abrupt degradation of thermal conductivity with burnup.

Publisher

Tsinghua University Press

Subject

Ceramics and Composites,Electronic, Optical and Magnetic Materials

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3