Binder chemistry, adhesion and structure of interfaces in thick-film metallized aluminium nitride substrates-Reference-Cited by-同舟云学术

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Binder chemistry, adhesion and structure of interfaces in thick-film metallized aluminium nitride substrates

Published:1992-01-01 Issue:10 Volume:27 Page:2670-2676
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Newberg C. E.,Risbud S. H.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00540688.pdf

Reference19 articles.

1. R. R. Tummala and E. J. Rymaszewski, Microelectronics Packaging Handbook (Van Nostrand-Reinhold, 1989) pp. 492–510.

2. N. Kuramoto, H. Taniguchi and I. Aso, Amer. Ceram. Soc. Bull. 68 (1989) 883.

3. L. M. Sheppard, ibid. 69 (1990) 1801.

4. N. Iwase, A. Tsuge and Y. Sugiura, Int. J. Hybrid Microelectron. 7 (1984) 49.

5. K. Komeya, A. Tsuge, H. Inque and H. Otha, Yogyo-Kyokai-Shi 89 (1981) 58.

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1. Thick Film Metallization of AlN by Reactive Binders;Advanced Materials Research;2010-04

2. Advanced thick film system for AlN substrates;Microelectronics International;2003-04

3. Electrical Properties of Al2O3- and MnO2-Doped Thick Film Resistors on AlN Substrates;Japanese Journal of Applied Physics;2002-05-15

4. Interfacial adhesion and microstructure of thick film metallized aluminum nitride substrates;Ceramics International;2002-01

5. Porosity development of RuO2 filled glass thick films on aluminum nitride substrates at elevated temperatures;Journal of Materials Science: Materials in Electronics;2000

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