Influence of structural and doping parameter variations on Si and $$\hbox {Si}_{1-x}$$ Si 1 - x $$\hbox {Ge}_{x}$$ Ge x double gate tunnel FETs: An analysis for RF performance enhancement-Reference-Cited by-同舟云学术

Influence of structural and doping parameter variations on Si and $$\hbox {Si}_{1-x}$$ Si 1 - x $$\hbox {Ge}_{x}$$ Ge x double gate tunnel FETs: An analysis for RF performance enhancement

Published:2018-05-25 Issue:1 Volume:91 Page:
ISSN:0304-4289
Container-title:Pramana
language:en
Short-container-title:Pramana - J Phys

Author:

Poorvasha S,Lakshmi B

Funder

Department of Science and Technology, Government of India

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/article/10.1007/s12043-018-1577-2/fulltext.html

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