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RF/Analog Performance Analysis of Electrostatically Doped Dual Pocket Vertical Tunnel Field Effect Transistor

  • Published:2022-02-26 Issue: Volume: Page:
  • ISSN:
  • Container-title:2022 IEEE VLSI Device Circuit and System (VLSI DCS)
  • language:
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Author:

Bhattacharyya Amit1,Banerjee Madhusree2,Debnath Papiya3,De Debashis4,Chanda Manash2

Affiliation:

1. Haldia Institute of Technology,Electronics and Communication Engineering Dept.,Haldia,India

2. Meghnad Saha Institute of Technology,Electronics and Communication Engineering Dept.,Kolkata,India

3. Techno International New Town,Basic Science and Humanities Dept.,Kolkata,India

4. Maulana Abul Kalam Azad University of Technology,Computer Science and Engineering Dept.,Kolkata,India

Publisher

IEEE

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping-Less Underlapped Dielectric Modulating Tunnel FET Biosensor Accomplishing Repulsive Steric Hindrance;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

2. Medical Diagnosis and Identification of Covid -19 by Intelligent IoT System and Resnet 18 Bilinear Deep Greedy Network;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26
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