1. Beale, J.R.A., Slatter, J.A.G.: Equivalent circuit of a transistor with a lightly doped collector operating in saturation. Solid-State Electron. 11, 241–252 (1968)
2. Berkner, J.: Kompaktmodelle für Bipolartransistoren. Praxis der Modellierung, Messung und Parameterbestimmung—SGP, VBIC, HICUM und MEXTRAM (Compact Models for Bipolar Transistors. Practice of Modelling, Measurement and Parameter Extraction—SGP, VBIC, HICUM und MEXTRAM). Expert, Renningen (2002) (In German)
3. Bonani, F., Ghione, G.: Noise in Semiconductor Devices. Springer, Berlin (2001)
4. Bowler, D.L., Lindholm, F.A.: High current regimes in transistor collector regions. IEEE Trans. Electron. Devices ED-20, 257–263 (1973)
5. Buckingham, M.J.: Noise in Electronic Devices and Systems. Ellis Horwood, Chichester (1983)