Modeling of MOS Matching
Author:
Publisher
Springer Netherlands
Link
http://link.springer.com/content/pdf/10.1007/978-90-481-8614-3_15
Reference48 articles.
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3. Enz, C.C., Krummenacher, F., Vittoz, E.A.: An analytical MOS transistor model valid in all regions of operations and dedicated to low-voltage and low-current applications. Analog Integr. Circuits Signal Process. J. 83–114 (1995)
4. Gildenblat, G., Xin, Li, Wu, W., Hailing, Wang, Jha, A., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.: PSP: An advanced surface-potential-based MOSFET model for circuit simulation. IEEE Trans. Electron Devices 1979–1993 (2006)
5. Gregor, R.W.: On the relationship between topography and transistor matching in an analog CMOS technology. IEEE Trans. Electron Devices 275–282 (1992)
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