Author:
Teng Ran,Zhou Qigang,Dai Xiaolin,Wu Zhiqiang,Xu Wenting,Xiao Qinghua,Wu Xiao,Guo Xi
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Reference16 articles.
1. Lan C.W., Recent progress of crystal growth modeling and growth control, Chem. Eng. Sci., 2004, 59(7): 1437.
2. Virbulis J., Tomzig E., and Ammon W., Silicon melt convection in large size Czochralski crucibles, Mater. Sci. Semicond. Process., 2003, 5(4–5): 353.
3. Omidreza A.N., Mohammed M.H., and Moez J., Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals, J. Cryst. Growth, 2011, 318(1): 173.
4. Tu H.l., Xiao Q.H., Gao Y., Zhou Q.G., Zhang G.H., and Chang Q., Numerical analysis and simulation of Czochralski growth process for large diameter silicon crystal, Rare Met., 2007, 26(6): 521.
5. Lukanin D.P., and Kalaev V.V., Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth, J. Cryst. Growth., 2004, 266(1–3): 20.