Achieving high carrier mobility and low lattice thermal conductivity in GeTe-based alloys by cationic/anionic co-doping-Reference-Cited by-同舟云学术

Achieving high carrier mobility and low lattice thermal conductivity in GeTe-based alloys by cationic/anionic co-doping

Published:2024-03-27 Issue:6 Volume:43 Page:2784-2795
ISSN:1001-0521
Container-title:Rare Metals
language:en
Short-container-title:Rare Met.

Author:

Wang Xiao-Qiang,Hu Xiao-Quan,Lin Jun-Yan,Li Chu-Bin,Yu Xiao-Tong,Chen Qi-Yong,Xi Li-Li,Yang Qi-Shuo,Li Han,Zhang Ji-Ye,Li Shuan-Kui^ORCID,Guo Kai^ORCID

Funder

Research and Development Program of China

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s12598-023-02606-4.pdf

Reference64 articles.

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3. Hong M, Li M, Wang Y, Shi XL, Chen ZG. Advances in versatile GeTe thermoelectrics from materials to devices. Adv Mater. 2023;35(2):2208272. https://doi.org/10.1002/adma.202208272.

4. Boschker JE, Wang RN, Calarco R. GeTe: a simple compound blessed with a plethora of properties. CrystEngComm. 2017;19(36):5324. https://doi.org/10.1039/c7ce01040k.

5. Hong M, Wang Y, Liu WD, Matsumura S, Wang H, Zou J, Chen ZG. Arrays of planar vacancies in superior thermoelectric Ge1−x−yCdxBiyTe with band convergence. Adv Energy Mater. 2018;8(30):1801837. https://doi.org/10.1002/aenm.201801837.

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