Simulation aided hot zone design for faster growth of CZ silicon mono crystals
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Link
http://link.springer.com/content/pdf/10.1007/s12598-011-0216-6.pdf
Reference10 articles.
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2. Rosenberger F., Fundamentals of Crystal Growth I, Springer-Verlag, Berlin Heidelberg, 1979
3. Vizman D., Gräbner O., and Müller G., Three-dimensional numerical simulation of thermal convection in an industrial Czochralski melt: comparison to experimental results, J. Cryst. Growth, 2001, 233(4): 687.
4. Vizman D., Friedrich J., and Müller G., Comparison of the predictions from 3D numerical simulation with temperature distributions measured in Si Czochralski melts under the influence of different magnetic fields, J. Cryst. Growth, 2001, 230(1–2): 73.
5. Spalart P. R., Strategies for turbulence modeling and simulations, Int. J. Heat. Fluid Flow, 2000, 21(3): 252.
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