Structure, morphology and electrical resistance of WxN thin film synthesized by HFCVD method with various N2 contents
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Link
http://link.springer.com/content/pdf/10.1007/s12598-016-0696-5.pdf
Reference50 articles.
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3. Marco JF, Gancedo JR, Auger MA, Sanchez O, Albella JM. Chemical stability of TiN, TiAlN and AlN layers in aggressive SO2 environments. Surf Interface Anal. 2005;37(12):1082.
4. Glaser A, Surnev S, Netzer FP, Fateh N, Fontalvo GA, Mitterer C. Oxidation of vanadium nitride and titanium nitride coatings. Surf Sci. 2007;601(4):1153.
5. Huang CF, Tsui BY, Lu CH. Thermal stability and electrical characteristics of tungsten nitride gates in metal–oxide–semiconductor devices. Jpn J Appl Phys. 2008;47(2):872.
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