Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Link
http://link.springer.com/content/pdf/10.1007/s12598-011-0380-8.pdf
Reference9 articles.
1. Gong X.Y., Kan H., Makino T., Iida T., Gao Y.Z., Aoyama M., Kumagawa M., and Yamaguchi T., Room-temperature operation of InAsSb/InAsPSb photodetectors with a cut-off wavelength of 4.3 μm, Jpn. J. Appl. Phys. Part 1, 1999, 38(2A): 685.
2. Shao H., Li W., Torfi A., Moscicka D., and Wang W.I., Room-temperature InAsSb photovoltaic detectors for mid-infrared applications, IEEE Photon. Technol. Lett., 2006, 18(16): 1756.
3. Nguyen B.M., Hoffman D., Huang E.K., Bogdanov S., Delaunay P.Y., Razeghi M., and Tidrow M.Z., Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate, Appl. Phys. Lett., 2009, 94(22): article No. 223506.
4. Gao Y.Z., Kan H., Gao F.S., Gong X.Y., and Yamaguchi T., Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats, J. Cryst. Growth, 2002, 234(1): 85.
5. Gao Y.Z., Gong X.Y., Gui Y.S., Yamaguchi T., and Dai N., Electrical properties of melt-epitaxy-grown InAs0.04Sb0.96 layers with cutoff wavelength of 12 μm, Jpn. J. Appl. Phys., 2004, 43(3): 1051
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