New low contact resistance triple capping layer enabling very high Gm InAIAs/lnGaAs HEMTs-Reference-Cited by-同舟云学术

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New low contact resistance triple capping layer enabling very high Gm InAIAs/lnGaAs HEMTs

Published:1996-05 Issue:5 Volume:25 Page:643-647
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Higuchi K.,Mori M.,Kudo M.,Mishima T.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666517.pdf

Reference16 articles.

1. U.K. Mishra et al.,IEEE IEDM Tech. Dig. 101 (1989).

2. L.D. Nguyen et al.,IEEE IEDM Tech. Dig. 105 (1989).

3. P.C. Chao et al.,Electron Device Lett. 11, (1) 59 (1990).

4. T. Enoki, K. Arai, T. Akazaki and Y. Ishii,IEICE Trans. Electron. E76-C, (9) 1402 (1993).

5. P. Ho et al.,Electron. Lett. 27, (4) 325 (1991).

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