Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP-Reference-Cited by-同舟云学术

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Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP

Published:1996-05 Issue:5 Volume:25 Page:611-617
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Nakata Hiroyasu,Satoh Kazuo,Ohyama Tyuzi,Fujiwara Yasufumi,Nonogaki Youichi,Takeda Yoshikazu

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666512.pdf

Reference10 articles.

1. A. Knauer, E. Richter and M. Weyers,J. Cryst. Growth 146, 549 (1995).

2. C.H. Chen, C.A. Larsen, G.B. Stringfellow, D.W. Brown and A.J. Robertson,J. Cryst. Growth 77,11 (1986).

3. C.A. Larsen, C.H. Chen, M. Kitamura, G.B. Stringfellow, D.W. Brown and A.J. Robertson,Appl. Phys. Lett. 48, 1531 (1986).

4. J.M. Chamberlain, P.E. Simmonds, R.A. Stradling and C.C. Bradley,J. Phys. C 4, L38 (1971).

5. T. Ohyama, E. Otsuka, S.Yamada, T. Fukui and N. Kobayashi,Jpn. J. Appl. Phys. 22, L742 (1983).

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