Author:
Nandy Shreya,Srivastava Sanjana,Rewari Sonam,Nath Vandana,Gupta R. S.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Arunprathap S, Napolean A, Azariah C (2014) Fabrication of thin film transistor using high K dielectric materials. Int J Eng Comput Sci 3(3):5387–5391
2. ATLAS (2015) 3D Device Simulator, SILVACO International
3. Contreras E, Cerdeira A, Alvarado J, Pavanello M (2010) Application of the symmetric doped double-gate model in circuit simulation containing double-gate graded-channel transistors. J Integr Circ Syst 5(2):110–115
4. Fahad HM, Hussain MM (2013) High-performance silicon nanotubetunneling FET for ultralow-power logic applications. IEEE Trans Electron Devices 60(3):1034–1038
5. Gautam R, Saxena M, Gupta RS, Gupta M (2011) Impact of interface fixed charges on the performance of the channel material engineered cylindrical nanowire MOSFET. Int J VLSI Des Commun Syst (VLSICS) 2(3):225–241
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22 articles.
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