Effect of Ge interface control layer on the interfacial and electrical properties of TaYOx thin films on GaAs substrates
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s00542-016-2916-1.pdf
Reference23 articles.
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3. Dalapati GK, Tong Y, Loh WY, Mun HK, Cho BJ (2007a) Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs. Appl Phys Lett 90:183510
4. Dalapati GK, Tong Y, Loh WY, Mun HK, Cho BJ (2007b) Electrical and interfacial characterization of atomic layer deposited High-k gate dielectrics on GaAs for advanced CMOS devices. IEEE Trans Electron Devices 54:1831
5. DiMaria DJ, Cartier E (1995) Mechanism for stress-induced leakage currents in thin silicon dioxide films. J Appl Phys 78:3883
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