Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs-Reference-Cited by-同舟云学术

Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs

Published:1996-02 Issue:2 Volume:25 Page:263-267
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Hua G. C.,Grillo D. C.,Ng T. B.,Chu C. C.,Han J.,Gunshor R. L.,Nurmikko A. V.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02666255.pdf

Reference8 articles.

1. S. Guha, J.M. Depuydt, M.A. Haase, J. Qiu and H. Cheng,Appl. Phys. Lett. 63, 3107 (1993).

2. G.C. Hua, N. Otsuka, D.C. Grillo, Y. Fan, J. Han, M.D. Ringle, R.L. Gunshor, M. Hovinen and A.V. Nurmikko,Appl. Phys. Lett. 65, 1331 (1994).

3. G.C. Hua, D.C. Grillo, Y. Fan, J. Han, M.D. Ringle, R.L. Gunshor, M. Hovinen, A.V. Nurmikko and N. Otsuka,II-VI Blue /Green Laser Diodes, ed. R.L. Gunshor and A.V. Nurmikko, Proc. SPIE 2346, p.142 (1994).

4. M. Hovinen, J. Ding, A. Salokatve, A.V. Nurmikko, G.C. Hua, D.C. Grillo, L. He, J. Han, M.D. Ringle and R.L. Gunshor,J. Appl. Phys. Lett. 77, 4150 (1995).

5. For example,Electron Microscopy of Thin Crystals, ed. P.B. Hirsch, (Huntington, New York, 1965).

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical and structural properties of sulfur-doped ELOG InP on Si;Journal of Applied Physics;2015-06-07

2. Identification of critical stacking faults in thin-film CdTe solar cells;Applied Physics Letters;2014-08-11

3. ZnSe-based heterostructures for blue-green lasers;Comptes Rendus de l'Académie des Sciences - Series IV - Physics;2000-03

4. Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy;Applied Physics Letters;1997-12

5. Determination of defect types of ZnSe-based epilayers by etch-pit configurations;Journal of Crystal Growth;1997-11