Publisher
Springer Science and Business Media LLC
Subject
General Earth and Planetary Sciences,General Engineering,General Environmental Science
Reference5 articles.
1. Mehrad M, Orouji AA (2011) A new nanoscale and high temperature field effect transistor: Bi level FinFET. Physica E 44(3):654–658
2. Richter et al S (2014) Tunnel-FET inverters for ultra-low power logic with supply voltage down to VDD = 0.2 V. In: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm, pp 13–16
3. Yu Y (2007) Negative bias temperature instability and charge trapping effects on analog and digital circuit reliability. M.S. Thesis, School of Electrical and Computer Science Technology, University of Central Florida, Orlando, Florida
4. Narang R, Saxena M, Gupta RS, Gupta M (2015) Comparative analysis of dielectric-modulated FET. IEEE Trans Nanotechnol 14(3):427–435
5. Kanungo S, Chattopadhyay S, Gupta PS, Rahaman H (2015) Comparative performance analysis of the dielectrically modulated full-gate and short-gate tunnel FET-based biosensors. IEEE Trans Electron Devices 62(3):994–1001
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献