Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements-Reference-Cited by-同舟云学术

Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements

Published:1988-11 Issue:3 Volume:47 Page:255-258
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Foulon F.,Slaoui A.,Fogarassy E.,Fuchs C.,Siffert P.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00615931.pdf

Reference11 articles.

1. I.W. Boyd: InDielectric Layers in Semiconductors: Novel Technologies and Devices, ed. by G.G. Bentini, E. Fogarassy, A. Golanski (Les Editions de Physique, Les Ulis, France 1986) p. 177

2. E. Fogarassy, C.W. White, A. Slaoui, C. Fuchs, P. Siffert: Appl. Phys. Lett, (submitted)

3. F. Foulon, E. Fogarassy, A. Slaoui, C. Fuchs, S. Unamuno, P. Siffert: Appl. Phys.A 45, 361 (1988)

4. A. Slaoui, E. Fogarassy, C.W. White, P. Siffert: Appl. Phys. Lett, (submitted)

5. G.H. Schiroky: J. Math. Sci.22, 3595 (1987)

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