Surface analysis for Si-wafers using total reflection X-ray fluorescence analysis-Reference-Cited by-同舟云学术

Surface analysis for Si-wafers using total reflection X-ray fluorescence analysis

Published:1989-01 Issue:4-5 Volume:333 Page:524-526
ISSN:0016-1152
Container-title:Fresenius' Zeitschrift für analytische Chemie
language:en
Short-container-title:Z. Anal. Chem.

Author:

Berneike W.,Knoth J.,Schwenke H.,Weisbrod U.

Publisher

Springer Science and Business Media LLC

Subject

Clinical Biochemistry,General Materials Science,General Medicine,Analytical Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF00572369.pdf

Reference6 articles.

1. Eichinger P, Rath H, Schwenke H (1988) Application of total reflection X-ray fluorescence analysis for metallic trace impurities on silicon wafer surfaces. In: Gupta C (ed) Semiconductor fabrication: technology and metrology, ASTM STP 990. American Society for Testing and Materials

2. Knoth J, Schwenke H (1978) Fresenius Z Anal Chem 291:200

3. Analytical Chemistry Division, International Union of Pure and Applied Chemistry (1978) Spectrochim Acta 33:241

4. Schwenke H, Knoth J, Weisbrod U, Neumann C (1988) Determination of metallic impurities in the surface of silicon wafers by total reflection X-ray flurorescence analysis. Pittsburgh Conference, Book of Abstracts, Extended Abstract No. 1236

5. Penka V, Hub W, submitted to Spectrochim Acta

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