Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation-Reference-Cited by-同舟云学术

Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation

Published:1997-03 Issue:1-4 Volume:125 Page:337-341
ISSN:0026-3672
Container-title:Mikrochimica Acta
language:en
Short-container-title:Mikrochim Acta

Author:

Markwitz Andreas,Baumann Horst,Michelmann Rolf W.,Meyer J�rg D.,Krimmel Eberhard F.,Bethge Klaus

Publisher

Springer Science and Business Media LLC

Subject

Analytical Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF01246208.pdf

Reference22 articles.

1. Gmelin Handbook of Inorganic and Organometallic Chemistry ?Si?;Supplement B 5C, Silicon Nitride in Microelectronics (in co-operation with E. F. Krimmel), Springer, Berlin Heidelberg New York Tokyo, 1991.

2. J. Mort, E. Jansen,Plasma Deposited Thin Films, CRC, Boca Raton, 1986.

3. A. Markwitz, H. Baumann, W. Grill, E. F. Krimmel, K. Bethge,Appl. Phys. Lett. 1994,64, 2652.

4. A. Markwitz, H. Baumann, P. Misaelides, E. F. Krimmel, K. Bethge,Fresenius. J. Anal. Chem. 1993,346, 177.

5. A. Markwitz, H. Baumann, E. F. Krimmel, R. W. Michelmann, C. Maurer, E. C. Paloura, A. Knop, K. Bethge,Appl. Phys. 1994,A59, 435.

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