Plasma immersion nitrogen implantation into silicon and rapid thermal electron beam annealing for surface structuring-Reference-Cited by-同舟云学术

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Plasma immersion nitrogen implantation into silicon and rapid thermal electron beam annealing for surface structuring

Published:2004-04 Issue:2-4 Volume:4 Page:241-244
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Markwitz A,Kennedy V.J,Short K,Rudolphi M,Baumann H

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference13 articles.

1. Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

2. Height control of silicon nano-whiskers embedded in ultra thin silicon nitride layers by rapid thermal annealing

3. Formation of micrometer sized crater shaped pits in silicon by low-energy 22Ne+ implantation and electron beam annealing

4. Ion-assisted surface modification by plasma immersion ion implantation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxygen and sodium plasma-implanted nickel–titanium shape memory alloy: A novel method to promote hydroxyapatite formation and suppress nickel leaching;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04

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