The implantation profiles of 10, 20 and 40 keV 85Kr in gallium arsenide-Reference-Cited by-同舟云学术

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The implantation profiles of 10, 20 and 40 keV 85Kr in gallium arsenide

Published:1969-03 Issue:3 Volume:4 Page:208-217
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Whitton J. L.,Carter G.,Freeman J. H.,Gard G. A.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00549920.pdf

Reference33 articles.

1. ?Int. Conf. on Applications of Ion Beams to Semiconductor Technology?, edited by P. Glotin (Grenoble, 1967).

2. ?Int. Conf. on Atomic Collisions and Penetration Studies?. Canad. J. Phys. 46 (1968).

3. J. Lindhard, M. Scharff, and H. E. Schiøtt, Kgl. danske Videnskab, Selskab, Mat-fys. Medd. 33, (1963) 14.

4. H. E. Schiøtt. Canad. J. Phys, 46 (1968) 449.

5. L. Eriksson, J. A. Davies, and P. Jespersgård, Phys Rev. 161 (1967) 219.

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2. The electrical characterisation of semiconductors;Reports on Progress in Physics;1978-02-01

3. Literatur;Ionenimplantation;1978

4. Ion Implantation and Channeling;Treatise on Solid State Chemistry;1976

5. Bestimmung der Implantationsprofile von B, P und As in Silizium;Isotopenpraxis Isotopes in Environmental and Health Studies;1975-01

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