Magnetoresistance anomaly in Fe5GeTe2 homo-junctions induced by its intrinsic transition-Reference-Cited by-同舟云学术

Magnetoresistance anomaly in Fe5GeTe2 homo-junctions induced by its intrinsic transition

Published:2023-04-04 Issue:7 Volume:16 Page:10443-10450
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Zhao Ruijie,Wu Yanfei,Yan Shaohua,Liu Xinjie,Huang He,Gao Yang,Zhu Mengyuan,Shen Jianxin,Shen Shipeng,Xu Weifeng,Zhang Zeyu,Zhang Liyuan,Zhang Jingyan,Zheng Xinqi,Lei Hechang,Zhang Ying,Wang Shouguo

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1007/s12274-023-5609-y.pdf

Reference53 articles.

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2. Burch, K. S.; Mandrus, D.; Park, J. G. Magnetism in two-dimensional van der Waals materials. Nature 2018, 563, 47–52.

3. Gong, C.; Zhang, X. Two-dimensional magnetic crystals and emergent heterostructure devices. Science 2019, 363, eaav4450.

4. Mermin, N. D.; Wagner, H. Absence of ferromagnetism or antiferromagnetism in one- or two-dimensional isotropic Heisenberg models. Phys. Rev. Lett. 1966, 17, 1133–1136.

5. Wang, Z.; Gutiérrez-Lezama, I.; Ubrig, N.; Kroner, M.; Gibertini, M.; Taniguchi, T.; Watanabe, K.; Imamoğlu, A.; Giannini, E.; Morpurgo, A. F. Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3. Nat. Commun. 2018, 9, 2516.

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