Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics-Reference-Cited by-同舟云学术

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

Published:2022-01-18 Issue:4 Volume:15 Page:3667-3674
ISSN:1998-0124
Container-title:Nano Research
language:en
Short-container-title:Nano Res.

Author:

Yuan Peng,Mao Ge-Qi,Cheng Yan,Xue Kan-Hao,Zheng Yunzhe,Yang Yang,Jiang Pengfei,Xu Yannan,Wang Yuan,Wang Yuhao,Ding Yaxin,Chen Yuting,Dang Zhiwei,Tai Lu,Gong Tiancheng,Luo Qing,Miao Xiangshui,Liu Qi

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,General Materials Science,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://link.springer.com/content/pdf/10.1007/s12274-021-4047-y.pdf

Reference42 articles.

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2. Fengler, F. P. G., Pešić, M., Starschich, S., Schneller, T., Künneth, C., Böttger, U., Mulaosmanovic, H., Schenk, T., Park, M. H., Nigon, R. et al. Domain pinning: Comparison of hafnia and PZT based ferroelectrics. Adv. Electron. Mater. 2017, 3, 1600505.

3. Zhou, Y., Chan, H. K., Lam, C. H., Shin, F. G. Mechanisms of imprint effect on ferroelectric thin films. J. Appl. Phys. 2005, 98, 024111.

4. He, L. X.; Vanderbilt, D. First-principles study of oxygen-vacancy pinning of domain walls in PbTiO3. Phys. Rev. B 2003, 68, 134103.

5. Tagantsev, A. K.; Stolichnov, I.; Setter, N., Cross, J. S. Nature of nonlinear imprint in ferroelectric films and long-term prediction of polarization loss in ferroelectric memories. J. Appl. Phys. 2004, 96, 6616–6623.

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