On the evaluation of statistical parameters of a normal distribution of filamentary resistances in a formed MIM device
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/BF00721384.pdf
Reference9 articles.
1. A. K. RAY and C. A. HOGARTH,Int. J. Electron. 57 (1984) 1.
2. G. DEARNALEY, D. V. MORGAN and A. M. STONEHAM,J. Non-Cryst. Solids,4 (1970) 593.
3. R. D. GOULD,55 (1983) 363.
4. A. K. RAY and C. A. HOGARTH,J. Mater. Sci. Lett. 4 (1985) 513.
5. Idem, Thin Solid Films 123 (1985) in press.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electro-formed characteristics of evaporated Mn/SiO thin cermet films;Journal of Materials Science Letters;1986-11
2. On the relationship between the conduction characteristics and the statistical parameters of a normal distribution of filamentary resistances in an electroformed metal/insulator/metal device;Thin Solid Films;1986-08
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