Author:
Kumar Sunil,Raj Balwinder
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Frank, D., Dennard, R.H., Nowak, E., Solomon, P.M., Taur, Y., Wong, H.-S.P.: Device scaling limits of Si MOSFETs and their application dependence. Proc. IEEE 89(3), 259–288 (2001)
2. Roy, K., Mukhopadhyay, S., Mahmoodi-Meimand, H.: Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits. Proc. IEEE 91(2), 305–327 (2003)
3. Ionescu, A.M., Boucart, K., Moselund, K.E., Pott, V., Tsamados, D.: Small slope micro/nano-electronic switches. In: Proceedings of the International Semiconductor Conference, pp. 397–402 (2007)
4. Goplakrishnan M., et al.: I-MOS: A novel semiconductor device with a subthreshold slop lower than kT/q. In: IEDM Technical Digest, pp. 289–292 (2002)
5. Nathanson, H., et al.: Resonant gate transistor. IEEE Trans. Electron Devices 14(3), 117–133 (1967)
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