Performance Assessment of N+ SiGe-Based Dielectrically Modulated Vertical Tunnel Field-Effect Transistors (DM-VTFET) for Lower Power Biomedical Application
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-1916-1_34
Reference24 articles.
1. Singh S, Sharma A, Kumar V, Umar P, Rao AK, Singh AK (2021) Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application. Appl Phys A 127(9):726
2. Choi WY, Park BG, Lee JD, Liu TJK (2007) Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Devices Lett 28(8):743–745
3. Jiang Z, Zhuang Y, Li C, Wang P, Liu Y (2016) Vertical-dual-source tunnel FETs with steeper subthreshold swing. J Semicond 37(9):094003
4. Brocard S, Pala MG, Esseni D (2013) Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope. In: 2013 IEEE international electron devices meeting. IEEE, pp. 4–5
5. Wang PY, Tsui BY (2015) Band engineering to improve average subthreshold swing by suppressing low electric field band-to-band tunneling with epitaxial tunnel layer tunnel FET structure. IEEE Trans Nanotechnol 15(1):74–79
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