Author:
Rejaiba Omar,Braña Alejandro F.,Matoussi Adel
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference45 articles.
1. Goldberger, J., Hochbaum, I.A., Fan, R., Yang, P.: Silicon Vertically Integrated Nanowire Field Effect Transistors. Nano. Lett. 6, 973 (2006)
2. Jianjun, C., Shuming, C., Bin, L., Biwei, L., Zheng, L., Zheqian, T.: Hot carrier effects of SOI NMOS. J. Semicond. 31, 74006 (2010)
3. Godoy, A., López-Villanueva, J.A., Jiménez-Tejada, J.A., Palma, A., Gámiz, F.: A simple subthreshold swing model for short channel MOSFETs. Solid. State. Electron. 45, 391 (2001)
4. Schroder, D.K.: Semiconductor material and device characterization, 3rd edn. John Wiley & Sons, New York (2006)
5. Bentarzi, H.: Transport in metal-oxide-semiconductor structures. Springer-Verlag, Berlin Heidelberg (2011)
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