Author:
Kumar Mirgender,Dubey Sarvesh,Tiwari Pramod Kumar,Jit S.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Taur, Y., Ning, T.H.: Fundamentals of Modern VLSI Devices. Cambridge University Press, Cambridge (1998)
2. Thompson, S.E., Parthasarathy, S.: Moore’s law: the future of Si microelectronics. Mater. Today 9, 20–25 (2006)
3. Moore, G.E.: Progress in digital integrated electronics. In: Int. Elec. Dev. Meet., pp. 11–13 (1975)
4. Chaudhry, A., Kumar, M.J.: Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: a review. IEEE Trans. Device Mater. Reliab. 4, 99–109 (2004)
5. Ieong, M., Doris, B., Kedzierski, J., Rim, K., Yang, M.: Silicon device scaling to the sub-10 nm regime. Science 306, 2057–2060 (2004)
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