Author:
El Hamid Hamdy Abd,Iñiguez Benjamin,Kilchytska Valeria,Flandre Denis,Ismail Yehea
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Rahman, M.R.: Design and fabrication of tri-gated FinFET. In: Proceedings of the 22nd Annual Microelectronic Engineering Conference (May 2004)
2. Hisamoto, D., et al.: FinFET–a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Devices 47, 2320–2325 (2000)
3. Mathew, L. et al.: CMOS vertical multiple independent gate field effect transistor-MIGFET. In: Proceedings of the IEEE International SOI Conference, pp. 187–189 (Oct 2004)
4. Lederer, D., Kilchytska, V., Rudenko, T., Collaert, N., Flandre, D., Dixit, A., De Meyer, K., Raskin, J.P.: FinFET analogue characterization from DC to 110 GHz. Solid-State Electron. 49(9), 1488–1496 (2005)
5. Kim, S.-H., Fossum, J.G., Trivedi, V.P.: Bulk inversion in FinFETs and implied insights on effective gate width. IEEE Trans. Electron Devices 52(9), 1993–1997 (2005)
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