Analyzing the distribution of threshold voltage degradation in nanoscale transistors by using reaction-diffusion and percolation theory-Reference-Cited by-同舟云学术

Analyzing the distribution of threshold voltage degradation in nanoscale transistors by using reaction-diffusion and percolation theory

Published:2011-09-13 Issue:4 Volume:10 Page:341-351
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Islam Ahmad Ehteshamul,Alam Muhammad Ashraful

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-011-0369-4.pdf

Reference44 articles.

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3. Pae, S., Maiz, J., Prasad, C., Woolery, B.: Effect of BTI degradation on transistor variability in advanced semiconductor technologies. IEEE Trans. Device Mater. Reliab. 8(3), 519–525 (2008)

4. Bernstein, K., Frank, D.J., Gattiker, A.E., Haensch, W., Ji, B.L., Nassif, S.R., Nowak, E.J., Pearson, D.J., Rohrer, N.J.: High-performance CMOS variability in the 65-nm regime and beyond. IBM J. Res. Dev. 50(4–5), 433–449 (2006)

5. Islam, A.E., Mahapatra, S., Deora, S., Maheta, V.D., Alam, M.A.: On the differences between ultra-fast NBTI experiments and reaction-diffusion theory. In: International Electron Devices Meeting (IEDM) Technical Digest, pp. 733–736 (2009)

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