Author:
Edrisi Arani Iman,Rezai Abdalhossein
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Rairigh, D.: Limits of CMOS Technology Scaling and Technologies Beyond-CMOS. Institute of Electrical and Electronics Engineers, Inc, Piscataway (2005)
2. Shafizadeh, M., Rezai, A.: Improved device performance in a CNTFET using La2O3 high-κ dielectrics. J. Comput. Electron. 16(2), 221–227 (2017)
3. Karimi, A., Rezai, A.: A design methodology to optimize the device performance in CNTFET. ECS J. Solid State Sci. Technol. 6(8), M97–M102 (2017)
4. Zareiee, M., Mehrad, M.: A reliable nano device with appropriate performance in high temperatures. ECS J. Solid State Sci. Technol. 6(4), M50–M54 (2017)
5. Zareiee, M.: Modifying buried layers in nano-MOSFET for achieving reliable electrical characteristics. ECS J. Solid State Sci. Technol. 5(10), M113–M117 (2016)
Cited by
39 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献