Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Lee, J.-W., Kumar, V., Adesida, I.: High-power-density 0.25 $$\mu $$ μ m gate-length AlGaN/GaN high-electron-mobility transistors on semi-insulating 6H-SiC substrates. Jpn. J. Appl. Phys. 45(1A), 13–17 (2006)
2. Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rödle, T., Selberherr, S.: Physics-based modeling of GaN HEMTs. IEEE Trans. Electron Devices 59, 685–693 (2012)
3. Ambacher, O., Foutz, B., Smart, J., Shealy, J.R., Weimann, N.G., Chu, K., Murphy, M., Sierakowski, A.J., Schaff, W.J., Eastman, L.F., Dimitrov, R., Mitchell, A., Stutzmann, M.: Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J. Appl. Phys. 87, 334–344 (2000)
4. Benbakhti, B., Soltani, A., Kalna, K., Rousseau, M., De Jaeger, J.C.: Effects of self-heating on performance degradation in AlGaN/GaN-based devices. IEEE Trans. Electron Devices 56, 2178–2185 (2009)
5. Garber, G.Z.: Numerical simulation of electron-hole plasma in heterostructural field-effect transistors. J. Commun. Technol. Electron. 50(10), 1211–1214 (2005)
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