Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications-Reference-Cited by-同舟云学术

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Junctionless MOSFETs with laterally graded-doping channel for analog/RF applications

Published:2013-06-12 Issue:4 Volume:12 Page:757-764
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Chen Yongbo,Mohamed Mohamed,Jo Michael,Ravaioli Umberto,Xu Ruimin

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-013-0478-3.pdf

Reference39 articles.

1. Hisamoto, D., Lee, W.-C., Kedzierski, J., Takeuchi, H., Asano, K., et al.: FinFET—a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Devices 47(12), 2320–2325 (2000)

2. Colinge, J.-P.: Multiple-gate SOI MOSFETs. Solid-State Electron. 48(6), 897–905 (2004)

3. Balestra, F., Cristoloveanu, S., Benachir, M., Brini, J., Elewa, T.: Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance. IEEE Electron Device Lett. 8(9), 410–412 (1987)

4. Cristoloveanu, S.: Silicon on insulator technologies and devices: from present to future. Solid-State Electron. 45, 1403–1411 (2001)

5. Cui, Y., Zhong, Z., Wang, D., Wang, W., Lieber, C.M.: High performance silicon nanowire field effect transistors. Nano Lett. 3(2), 149–152 (2003)

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