Funder
Council of Scientific and Industrial Research
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Ionescu, A.M., Riel, H.: Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373), 329–337 (2011)
2. Vijayvargiya, V., Vishvakarma, S.K.: Effect of drain doping profile on double-gate tunnel field-effect transistor and its influence on device RF performance. IEEE Trans. Nanotechnol. 13(5), 974 (2014)
3. Vishvakarma, S., Beohar, A., Vijayvargiya, V., Trivedi, P.: Analysis of DC and analog/RF performance on Cyl-GAA-TFET using distinct device geometry. J. Seniconductors 38(7), 19 (2017)
4. Wu, J., Min, J., Taur, Y.: Short-channel effects in tunnel FET with high-k gate dielectric. IEEE Trans. Electron Devices 62(9), 3019 (2015)
5. Boucart, K., Ionescu, A.M.: Double-gate tunnel FET with high-k gate dielectric. IEEE Trans. Electron Devices 54(7), 1725 (2007)
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献