Performance optimization of MOS-like carbon nanotube-FETs based on electrostatic doping-Reference-Cited by-同舟云学术

Performance optimization of MOS-like carbon nanotube-FETs based on electrostatic doping

Published:2010-06 Issue:2 Volume:9 Page:87-92
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Zhou Hailiang,Zhang Minxuan,Hao Yue

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-010-0308-9.pdf

Reference33 articles.

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3. Javey, A., Guo, J., Wang, Q., Lundstrom, M., Dai, H.J.: Ballistic carbon nanotube field-effect transistors. Nature 424, 654–657 (2003)

4. Heinze, S., Tersoff, J., Martel, R., Derycke, V., Appenzeller, J., Avouris, P.: Carbon nanotubes as Schottky barrier transistors. Phys. Rev. Lett. 89(10), 6801 (2003)

5. Sze, S.M.: Physics of Semiconductor Devices. Wiley, New York (1981)

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